Centre for Nanoscience
and Nanotechnology

Material Growth

 

  Epitaxy facilities

Different advanced growth technologies are available at C2N :

- MBE (molecular beam epitaxy) of III-V

- MOVPE (metalorganic vapor phase epitaxy) of III-V and SiGeSn alloys

- UHV-CVD (ultra-high vacuum chemical vapor deposition) of SiGe system

- CBE (chemical beam epitaxy) of III-V and SiGe alloys

- PLIE (pulsed laser induced epitaxy) and GILD (gas immersion laser doping) for Si supraconductor

- PLD (pulsed laser deposition) for functionnal oxides

- CVD/PECVD AIXTRON (chemical vapour deposition) for graphene

  Members

Grégoire BEAUDOIN
Tel : (+33) 1 69 63 62 45
gregoire.beaudoin@lpn.cnrs.fr

Antonella CAVANNA
Tel : (+33) 1 69 63 60 61
antonella.cavanna@lpn.cnrs.fr

Géraldine HALLAIS
Tel : (+33) 1 69 15 40 41
geraldine.hallais@u-psud.fr

Ali MADOURI
Tel : (+33) 1 69 63 60 69
ali.madouri@lpn.cnrs.fr

Laurent TRAVERS
Tel : (+33) 1 69 63 60 65
laurent.travers@lpn.cnrs.fr

 

 Department of Materials

This pool of expertise is part of the Department of Materials

  MBE 

MBE8.jpg

  MOVPE 

MOCVD4.jpg

  UHV-CVD and CBE 

uhvcvd.png

  PLIE and GILD 

equipe-dop laser-Si supra.jpg

  PLD

PLD.png

  CVD/PECVD AIXTRON 

CVD-AIXTRON.png