Centre for Nanoscience
and Nanotechnology

Material Growth

 

Epitaxy facilities

Different advanced growth technologies are available at C2N :

- MBE (molecular beam epitaxy) of III-V

- MOVPE (metalorganic vapor phase epitaxy) of III-V and SiGeSn alloys

- UHV-CVD (ultra-high vacuum chemical vapor deposition) of SiGe system

- CBE (chemical beam epitaxy) of III-V and SiGe alloys

- PLIE (pulsed laser induced epitaxy) and GILD (gas immersion laser doping) for Si supraconductor

- PLD (pulsed laser deposition) for functionnal oxides

- CVD/PECVD AIXTRON (chemical vapour deposition) for graphene

Members

Ali MADOURI
Tel : (+33) 1 69 63 60 69
ali.madouri@c2n.upsaclay.fr

Laurent TRAVERS
Tel : (+33) 1 69 63 60 65
laurent.travers@c2n.upsaclay.fr

Department of Materials

This pool of expertise is part of the Department of Materials

MBE

PLIE and GILD

MOVPE

PLD

UHV-CVD and CBE

CVD/PECVD AIXTRON