News

image not available

Subwavelength Control of Photons and Phonons in Release-Free Silicon Optomechanical Resonators

Integrated optomechanics finds increasingly broadening applications, requiring tight confinement of photons and phonons within nanometric-scale photonic circuits. However, most existing integrated optomechanical devices use unconventional materials or suspended structures that hinder co-integration with scalable photonic technologies. Here, we show …

Read more...
image not available

Integrated optoelectronics devices operating in the long wave infra red wavelength

Optical spectroscopy in the mid-infrared (mid-IR) range is an unambiguous way to detect environmental and toxic analytes. Therefore, mid-IR photonics has a great importance for many applications in sensing, imaging or even telecommunication. A challenging task is to make …

Read more...
image not available

A Memristor-Based Bayesian Machine

Artificial intelligence is making major progress today, but it faces a challenge: its considerable energy consumption, which limits its applications and raises environmental issues. It is now well understood that this consumption comes from the separation, in computers, between …

Read more...
image not available

Optical reading of multistate nonvolatile oxide memories based on the switchable ferroelectric photovoltaic effect

Researchers from C2N have developed a nonvolatile oxide memory device based on ferroelectric thin films showing eight stable and well-controlled information states. The information, stored in the remanent ferroelectric polarization of the material, can be written electrically by voltage …

Read more...
image not available

When the Nanowires from C2N lead an Enhancement of Single-Photon Purity and Coherence of III-Nitride Quantum Dot with Polarization-Controlled Quasi-Resonant Excitation

Materials Science is at the heart of new technological developments. These last years, the III-Nitride Team from the Materials Department's has mastered the growth InGaN/GaN NWs, with InGaN insertions characterized by high homogeneity, indium contents of up to 50% …

Read more...