July 8, 2020

Silicon-germanium photo-receiver for mainstream telecom-waveband networks on a chip

Researchers at C2N, in co-operation with CEA LETI and STMicroelectronics, have demonstrated a power-efficient and high-speed silicon-germanium avalanche photo-receiver. The device is fully compatible with ...

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May 29, 2020

Amplifying a weak signal by manipulating the nonlinear resonance in a nano-electromechanical resonator

A team of researchers at C2N has experimentally demonstrated an enhancement by more than an order of magnitude of a weak electrical signal thanks to ...

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May 18, 2020

The key components of a terahertz receiver, fabricated in the C2N cleanroom facility, will be on board of the ESA mission JUICE

The C2N and the Laboratoire d’Etude du Rayonnement et de la Matière en Astrophysique et Atmosphères – LERMA1 have jointly developed a process to ...

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Aug. 18, 2020

Scientists use photons as threads to weave novel forms of matter

Positive and negative electric charges attract each other, forming atoms, molecules, and all that we usually refer as matter. Negative charges instead repel each other ...

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Oct. 9, 2020

Scientists mimic the properties of harmonic oscillators with semiconductors and demonstrate unprecedented room temperature THz absorption

The harmonic oscillator is a foundational concept in physics ...

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May 7, 2020

Generation of a guided-wave “Bessel-Gaussian” beam using an integrated 2D array of plasmonic nanoresonators

Researchers at the Centre de Nanosciences et de Nanotechnologies (C2N), in collaboration with Laboratoire Interdisciplinaire Carnot de Bourgogne (ICB) have demonstrated the generation of a ...

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June 15, 2020

Mesoscopic limit cycles in coupled nanolasers under strong fluctuations

Using two coupled nanolasers, researchers have demonstrated the existence of limit cycles with only a thousand photons in the cavities, in spite of the strong ...

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June 9, 2020

The cascade to criticality

Researchers at C2N (CNRS/Université Paris-Saclay), PhLAM laboratory (CNRS/Univ. de Lille) and ETH Zurich have unveiled a novel mechanism describing how criticality - a phase ...

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Sept. 9, 2020

Entropy reduces the lifetime of magnetic bits

Retaining stored information in magnetic materials relies on making energy barriers difficult to overcome. In a theoretical study, two researchers at C2N show that the ...

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May 27, 2020

Molecular ‘fingerprinting’ technology that fits on a fingertip

Article published on the European Commission website CORDIS, about the ERC Starting Grant project « Chip-scale INtegrated Photonics for the mid-Infra REd » (INsPIRE), led ...

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More C2N News



The centre develops research in the fields of material science, nanophotonics, nanoelectronics, nanobiotechnologies and microsystems, as well as in nanotechnologies. Its research activites cover all the range from fondamental to applied science.

The scientific project revolves around 10 major scientific challenges which are common to the 4 departments and federate research within the laboratory.

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Each year, researchers, engineers and technicians from around the world apply for CNRS or Paris-Saclay University positions to carry out their activity at C2N.

A number of internship, PhD position and Post-doc opportunities are also open at C2N.

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The C2N gathers 3 plateforms into the Technology Facility and 3 platforms of expertise in instrumentation and characterization (optical and multiphysics).

The C2N Technology Facility belongs to the national nanofabrication network (Renatech network).

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    Afficher plus de Seminars


    Ultra-Fast Compositional Depth Profile Analysis for Microelectronics Applications

    Abstract: Would you appreciate a tool capable of providing stoichiometry of freshly deposited thin films in just a few minutes?
    In a context of growing ...

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    The Colloquium with Claudia Felser is postponed to a later date.

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    The seminar with Sara DUCCI is postponed to a later date.

    Generation and manipulation of quantum states of light with AlGaAs chips

    The development of ...

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    GaN Nanowires for Piezoelectric Generation

    With the amount of connected objects constantly on a rise, it becomes critical to deal with the associated increase in energy consumption. Their energetic autonomy ...

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    Photo-induced effects in ferroelectric thin film based devic

    Ferroelectric materials exhibit coupled degrees of freedom and possess a switchable electric polarization coupled to strain, making them good piezoelectrics and enabling numerous devices including ...

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    Generation and manipulation of quantum states of light with AlGaAs chips

    The development of miniaturized devices for the generation and manipulation of entangled states of light is one of the key issues on the way towards ...

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    PhD defense
    Afficher plus de PhD defense


    (in french) Caractérisation électrique de nanofils de semi-conducteurs III-V pour des applications photovoltaïques

    José PENUELAS: Maitre de conférence à Ecole Centrale de Lyon, Rapporteur.
    Bruno GRANDIDIER: Directeur de recherche CNRS à IEMN, Rapporteur.
    Blandine ALLOING: Chargée de recherche ...

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    The switching paths of spin transfer torque magnetic random access memories

    André THIAVILLE, Professeur, Université Paris-Saclay (LPS), Examinateur

    Catherine GOURDON,Directrice de recherche CNRS, Institut des Nanosciences de Paris, Rapporteur

    Ricardo SOUSA, Chercheur (HDR), SPINTEC CEA ...

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    III-nitrides on silicon: a platform for integrated photonics from the ultraviolet to the near-infrared

    Nicolas GRANDJEAN, Pr, EPFL, Rapporteur & Examinateur

    Alfredo DE ROSSI, HdR, Ingénieur TRT, Rapporteur & Examinateur

    Maria TCHERNYCHEVA, DR, CNRS, C2N, Examinatrice

    Michael KNEISSL, Pr ...

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    HdR defense
    Afficher plus de HdR defense


    (in french) Intégration de semiconducteurs III-V et IV-IV sur silicium à l’échelle nanométrique

    Jury members :

    Chantal FONTAINE, Rapporteur 1

    Thierry BARON, Rapporteur 2

    Charles CORNET, Rapporteur 3

    Bruno GERARD, Examinateur 1

    Gilles PATRIARCHE, Examinateur 2

    Daniel BOUCHIER, Examinateur 3 ...

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    Controlling Magnetism by Interface Engineering

    Jury members:

    Prof. Stéphane Mangin, Université de Lorraine, Nancy, rapporteur

    Dr. Jean-Philippe Attané, CEA Grenoble, Grenoble, rapporteur

    Prof. Massimiliano Marangolo, Institut des NanoSciences de Paris ...

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