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A new memory resistive device developed with magnetic nanopillars surrounded by resistive silicon switches

Magnetic nanopillars surrounded by resistive silicon filaments have been used to develop a novel memristive memory.

Emerging non-volatile memories (NVMs) combined with novel computing architectures ...

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Taking a step towards intelligent miniature chips

CNRS Press Release − April 18, 2018

Researchers from the Unité Mixte de Physique CNRS/Thales and the Centre de Nanosciences et de Nanotechnologies - C2N ...

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Pascale Senellart-Mardon is elected as a Fellow Member 2018 of the Optical Society of America

Pascale Senellart-Mardon, CNRS senior researcher at C2N, was elected as a Fellow Member 2018 of the Optical Society of America (OSA) during the CLEO conference ...

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Beyond a material’s limit of conductance by controlling the interactions between electrons

News from Institut de physique of CNRS - June 15, 2018 (released in French)

Physicists have observed that the conductance of an electrical current can go ...

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