ELPHYSE group
Elaboration and Physics of Epitaxial Structures
Elphyse combines expertise in epitaxial growth, structural analyses and modelling. We produce and investigate a wide range of III-V semiconducting epitaxial structures and nanostructures for internal and collaborative studies extending from basic physics to device applications.

MAT2D group
Electronic and optomechanic of 2D materials

We design, fabricate and analyse novel hybrid heterostructures based on two-dimensional materials (graphene, and transition metal dichalcogenides).

OXIDE group
OXides Integrated in DEvice

Oxide thin films are epitaxially grown and integrated in new devices with advanced functionnalities such as ferro-, thermo- or piezo-electricity.

EPLA group
Laser Doping and Superconducting Silicon

We grow epitaxially, by laser doping, ultra-doped Si and Ge thin layers, to explore their electrical and optical properties. Highly boron-doped Si is superconducting. We investigate its superconducting properties, design and test all-silicon quantum devices (Josephson junctions, Squids, resonators...).

SEEDs group
Selective Epitaxy Engineering for Disruptive Devices

Innovative concepts of selective epitaxy by CVD are studied for the heterogeneous monolithic integration on silicon and the development of novel heterostructures with advanced functionalities (photovoltaic, optoelectronics in MIR and thermoelectricity).

Growth and Structural Analysis Platforms
POEM & PANAM