Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off
High contact resistance (RC) between 3D metallic conductors and single-layer 2D semiconductors poses major challenges toward their integration in nanoscale (opto)electronic devices. While in experiments the large RC values can be partly due to defects, ab initio simulations suggest …
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