Owing to their direct band gap, III-V semiconductors have been immensely successful over the past decades, finding numerous applications in everyday life. Despite their technological maturity, there are still numerous areas left to explore with these materials, the reward being a slew of new applications at other wavelengths, in quantum optics or nonlinear optics.

There are two fronts to explore: complex heterostructures based on mature semiconductors, where innovation lurks at interfaces and the control of objects of low dimensionality; or, alternatively, by developing semiconductors that are yet relatively unknown. The present habilitation covers both fronts, discussing epitaxy, structural characterization and applications in photonics and photonic integration.

Jury members :  

• Lefebvre, Williams, Professeur, Université de Rouen Normandie
• Rouvière, Jean Luc, Directeur de Recherches CEA, CEA/DRF/IRIG
• Strasser, Gottfried, Professeur des Universités, TU Wien
• Marris-Morini, Delphine, Professeure des Universités, Université Paris-Saclay C2N
• Tournié, Eric, Professeur des Univesités, Université de Montpellier - IES
• Ougazzaden, Abdallah, Professeur, School of Electrical and Computer Engineering, Georgia Institute of Technology

Figure : Examples of the topics covered include : InGaAs/InAlAs asymetric coupled quantum wells ; GeSn alloys on III-V pseudosubstrates ; InP directly wafer-bonded on Si ; Orienation-patterned GaP waveguides for non-linear photonics ; Atomic-scale quantification of the HAADF contrast