Synthesis of crystal phase quantum dots in III-V nanowires
Supervisor: Federico Panciera 
Starting date: February 2026

This Master 2 internship focuses on the growth and control of III–V semiconductor nanowires, which are key components for next-generation devices such as quantum light sources and lasers. The project aims to achieve precise control of nanowire crystal phases to fabricate crystal-phase quantum dots (CPQDs). The intern will participate in in situ transmission electron microscopy (TEM) experiments during nanowire growth using molecular beam epitaxy (MBE). They will develop and apply image-processing algorithms to analyze growth dynamics, extracting parameters such as droplet size, contact angle, and crystal phase. This internship combines experimental nanoscience, data analysis, and modeling, and may lead to a Ph.D. opportunity.

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