Magnetic nanopillars surrounded by resistive silicon filaments have been used to develop a novel memristive memory.
Emerging non-volatile memories (NVMs) combined with novel computing architectures have recently been considered as the most promising solution to overcome the “memory wall” of von Neumann computing systems. For instance, in-memory computing architectures based on closely integrating fast NVMs with logic functions have been proposed to minimize the power consumption and pave the way toward normally-off/ instant-on computing. Along this direction, two of the most promising NVMs, i.e., magnetic random access memory (MRAM) and resistive random access memory RRAM have attracted increasing interest, but each of them still shows a few shortcomings.
A collaboration between the Centre de Nanosciences et de Nanotechnologies/Centre for Nanoscience and Nanotechnology – C2N (CNRS/Université Paris-Sud) and Beihang University in China demonstrates a novel memory resistive (“memristive”) device combining the advantages of MRAM and RRAM in a single element. It is based on a magnetic tunnel junction nanopillar surrounded by resistive silicon filaments. It features spin transfer torque fast switching for computation together with multilevel resistive switching for non‐volatile memory. Their work is published in the magazine Advanced Electronic Materials and is used as a cover of the March 2018 issue.
This work provides new functionalities that are inaccessible to conventional NVMs, e.g., for in-memory computing and neuromorphic computing as non-von Neumann computing architectures.
Figure : This works was published in Advanced Electronic Materials (volume 4, issue 3, March 2018) and was chosen as cover picture.Reference:
Memristors: Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches,
Y. Zhang, X. Lin, J.-P. Adam, G. Agnus, W. Kang, W. Cai, J.-R. Coudevylle, N. Isac, J. Yang, H. Yang, K. Cao, H. Cui Deming Zhang, Y. Zhang, C. Zhao, W. Zhao, D. Ravelosona, Advanced Electronic Materials (2018)
DOI: https://doi.org/10.1002/aelm.201870014
- Centre de Nanosciences et de Nanotechnologies – C2N (CNRS/Université Paris-Sud)
- Fert Beijing Institute, Beihang University - Beijing, China
- Institute of Microelectronics, Chinese Academy of Sciences - Beijing, China
Contact :
- Dafiné Ravelosona, Senior CNRS researcher at C2N
