Graphene assisted III-V layer transfer for low-cost high-efficiency photovoltaics M/W
Starting from October 2022
III-V are part of a material family with a wide range of optoelectronic applications (LEDs, lasers, solar cells, etc.), and their integration with other materials would allow the manufacture of new generation devices: optical functions on silicon, flexible substrates for new applications... We are particularly interested in transferring epitaxial III-V layers and recycling the original substrate for new growths. This process would open the door to high-efficiency solar cells at a low cost (the substrate represents 80% of the final cost of the cell). To do this, we are developing a method of epitaxy of III-V materials with an interlayer of graphene. This layer of graphene allows the resumption of epitaxy while introducing a mechanically weaker plane allowing exfoliation. This project represents both a technological interest, through the development of an original process, and a scientific interest, by bringing into play new growth mechanisms. The post-doc will develop fabrication techniques (graphene and III-V layers exfoliations, surface preparation for the epitaxy), characterise the physico-chemical properties of surfaces and interfaces, and improve our understanding of the mechanisms at play.
Specific tasks may include, but are not limited to:
- The preparation and fabrication of surfaces for the successive growths in clean-room: graphene transfer and of epitaxial layers, chemical preparation of the surface.
- The characterization of existing surfaces and interfaces by XPS, AFM, microscopy and Raman.
- The study of the influence of graphene deposition upon the epitaxy quality.
The ideal candidate profile includes:
- Ph.D. in chemistry, physics, or material science
- Knowledge in material science, thin films with good experimental skills
- A first experience in material growth and/or clean room work will be an advantage
- A track record of high-quality scientific publications is desirable
This mission is carried out in collaboration between the SUNLIT team at the Center for Nanosciences and Nanotechnologies, and the “Electrochemistry and Physico-Chemistry at Interfaces” (EPI) group from the Lavoisier Institute of Versailles. The successful candidate will be based at C2N and will be required to make frequent trips to ILV.
The SUNLIT team is working on the development of new architectures and manufacturing processes for solar cells that are both high-efficiency, low cost and environmental impact. The activities of the EPI group are related to the modification of the surface properties of materials by chemical and electrochemical processes associated with advanced surface analysis techniques developed in its CEFS2 spectroscopy centre.
Starting date and duration
1-year post-doc position starting from October 1st, 2022
Dr Solène Béchu : firstname.lastname@example.org; Dr Amaury Delamarre : email@example.com
PhD and/or Post‐Doctoral opening “Optoelectronic devices enabled by vacuum‐field photons”
Starting from October 2022
We have an opening for a three‐year PhD position (or for a two‐year post‐doctoral appointment) at University Paris Saclay (France) and CNRS, within the Centre for Nanosciences and Nanotechnologies (C2N).
The goal of the project is to explore the electronic response of semiconductor devices that, being embedded in optical microcavities, operate in the ultra‐strong light matter coupling regime. In this regime, the light‐matter interaction is so strong that it alters even fundamental properties of the device, such as its conductancein the dark (that is, in absence of any photonic excitation).
More information in the file attached