ELPHYSE group
Elaboration and Physics of Epitaxial Structures
Elphyse brings together expertise in epitaxial growth, structural analysis, and theoretical modelling. We develop and study a broad range of III–V semiconductor epitaxial layers and nanostructures, supporting research that spans from fundamental physics to device-oriented applications.

MAT2D group
Electronic and optomechanic of 2D materials

We design, fabricate and analyse novel hybrid heterostructures based on two-dimensional materials (graphene, and transition metal dichalcogenides).

OXIDE group
OXides Integrated in DEvice

Oxide thin films are epitaxially grown and integrated in new devices with advanced functionnalities such as ferro-, thermo- or piezo-electricity.

EPLA group
Laser Doping and Superconducting Silicon

We grow epitaxially, by laser doping, ultra-doped Si and Ge thin layers, to explore their electrical and optical properties. Highly boron-doped Si is superconducting. We investigate its superconducting properties, design and test all-silicon quantum devices (Josephson junctions, Squids, resonators...).

SEEDs group
Selective Epitaxy Engineering for Disruptive Devices

Innovative concepts of selective epitaxy by CVD are studied for the heterogeneous monolithic integration on silicon and the development of novel heterostructures with advanced functionalities (photovoltaic, optoelectronics in MIR and thermoelectricity).

POLYMETIS group

The Polymetis group focuses on epitaxy of III-V semiconductors and quantitative transmission electron microscopy. The group develops a variety of materials relevant in photonics

Growth and Structural Analysis Platforms
POEM & PANAM