Optical spectroscopy in the mid-infrared (mid-IR) range is an unambiguous way to detect environmental and toxic analytes. Therefore, mid-IR photonics has a great importance for many applications in sensing, imaging or even telecommunication. A challenging task is to make mid-IR spectroscopy accessible in remote areas, driving the development of compact and cost-effective solutions. The development of mid-IR photonics circuits has thus witnessed a burst of research activity in the recent years.
In this context, researchers from C2N in collaboration with Politecnico Di Milano have experimentally demonstrated high performance on-chip optoelectronics devices.
First, optical modulator based on free carrier plasma dispersion effect in graded SiGe waveguide embedding a Schottky diode have been developed. The main challenges for high-speed operation have been tackled, allowing to demonstrate 1 GHz operation in an integrated device operating from 5 to 9 µm wavelength [1].
Then a waveguide-integrated photodetector has been demonstrated for the first time in a similar wavelength range [2]. A responsivity reaching up to 0.1 mA/W has been obtained at room temperature, which opens strong perspectives for the development of compact and efficient spectroscopic systems exploiting synchronous detection or for on-chip monitoring.
References :
[1] Room temperature integrated photodetector between 5 µm and 8 µm wavelength
Advanced Photonics Research, 2200237 (2022)
T.H.N. Nguyen1, N. Koompai1, V. Turpaud1, M. Montesinos-Ballester1, J Frigerio2, S. Calcaterra2, A. Ballabio2, X. Le Roux1, J-R. Coudevylle1, C. Villebasse1, D. Bouville1, C. Alonso-Ramos1, L. Vivien1, G. Isella2, D. Marris-Morini1
1 Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay, 91120 Palaiseau, France
2 L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo di Como, Via Anzani 42, 22100 Como, Italy
DOI : http://doi.org/10.1002/adpr.202200237
GHz electro-optical silicon-germanium modulator in the 5-9 μm wavelength range
Optics Express, 30, (26), 47093 (2022)
T.H.N. Nguyen1, N. Koompai1, V. Turpaud1, M. Montesinos-Ballester1, J. Peltier2, J Frigerio2, A. Ballabio2, R. Giani2, J-R. Coudevylle1, C. Villebasse1, D. Bouville1, C. Alonso-Ramos1, L. Vivien1, G. Isella2, D. Marris-Morini1
1 Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay, 91120 Palaiseau, France
2 L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo di Como, Via Anzani 42, 22100 Como, Italy
DOI : https://doi.org/10.1364/OE.476164
Contact : Delphine Marris-Morini
Legend : left : schematic view of an integrated modulator (inset : optical microscope view of the fabricated device), right : characterization of the modulator : extinction ratio as a function of the applied voltage for different input wavelengths
