Electronic properties of the selenium passivated GaP(111)B surface : towards growth of large scale quasi-van der Waals 2D/3D heterostructures
In recent years, several well-established 3D substrates have been considered for the van der Waals epitaxy of 2D-transition metal dichalcogenides, yet require a proper surface passivation treatment. In the framework of a collaboration between IEMN and C2N, the structural …
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