When the Nanowires from C2N lead an Enhancement of Single-Photon Purity and Coherence of III-Nitride Quantum Dot with Polarization-Controlled Quasi-Resonant Excitation
Materials Science is at the heart of new technological developments. These last years, the III-Nitride Team from the Materials Department's has mastered the growth InGaN/GaN NWs, with InGaN insertions characterized by high homogeneity, indium contents of up to 50% …
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